Investigation of quadratic electro-optic effects and electro-absorption process in GaN/AlGaN spherical quantum dot

Abstract

Quadratic electro-optic effects (QEOEs) and electro-absorption (EA) process in a GaN/AlGaN spherical quantum dot are theoretically investigated. It is found that the magnitude and resonant position of third-order nonlinear optical susceptibility depend on the nanostructure size and aluminum mole fraction. With increase of the well width and barrier potential, quadratic electro-optic effect and electro-absorption process nonlinear susceptibilities are decreased and blueshifted. The results show that the DC Kerr effect in this case is much larger than that in the bulk case. Finally, it is observed that QEOEs and EA susceptibilities decrease and broaden with the decrease of relaxation time.