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dc.contributor.authorTran, DP
dc.contributor.authorWinter, MA
dc.contributor.authorWolfrum, B
dc.contributor.authorStockmann, R
dc.contributor.authorYang, CT
dc.contributor.authorPourhassan-Moghaddam, M
dc.contributor.authorOffenhausser, A
dc.contributor.authorThierry, B
dc.date.accessioned2018-08-26T07:30:59Z
dc.date.available2018-08-26T07:30:59Z
dc.date.issued2016
dc.identifier.urihttp://dspace.tbzmed.ac.ir:8080/xmlui/handle/123456789/47187
dc.description.abstractWithin an hour, as little as one disseminated tumor cell (DTC) per lymph node can be quantitatively detected using an intraoperative biosensing platform based on silicon nanowire field-effect transistors (SiNW FET). It is also demonstrated that the integrated biosensing platform is able to detect the presence of circulating tumor cells (CTCs) in the blood of colorectal cancer patients. The presence of DTCs in lymph nodes and CTCs in peripheral blood is highly significant as it is strongly associated with poor patient prognosis. The SiNW FET sensing platform out-performed in both sensitivity and rapidity not only the current standard method based on pathological examination of tissue sections but also the emerging clinical gold standard based on molecular assays. The possibility to achieve accurate and highly sensitive analysis of the presence of DTCs in the lymphatics within the surgery time frame has the potential to spare cancer patients from an unnecessary secondary surgery, leading to reduced patient morbidity, improving their psychological wellbeing and reducing time spent in hospital. This study demonstrates the potential of nanoscale field-effect technology in clinical cancer diagnostics.
dc.language.isoEnglish
dc.relation.ispartofACS NANO
dc.subjectintraoperative detection
dc.subjectCMOS
dc.subjectsilicon nanowire on a chip
dc.subjectlymph node metastasis
dc.subjectnano fabrication
dc.subjectintegrated biosensor
dc.subjectmultichannel detection
dc.subjectdiagnostic
dc.titleToward Intraoperative Detection of Disseminated Tumor Cells in Lymph Nodes with Silicon Nanowire Field Effect Transistors
dc.typeArticle
dc.citation.volume10
dc.citation.issue2
dc.citation.spage2357
dc.citation.epage2364
dc.citation.indexWeb of science
dc.identifier.DOIhttps://doi.org/10.1021/acsnano.5b07136


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